In this paper we present a novel fabrication technique for silicon nitride (Si3N4) waveguides with a thickness of up to 900 nm, which are suitable for nonlinear optical applications. The fabrication method is based on etching trenches in thermally oxidized silicon and filling the trenches with Si3N4. Using this technique no stress-induced cracks in the Si3N4 layer were observed resulting in a high yield of devices on the wafer. The propagation losses of the obtained waveguides were measured to be as low as 0.4 dB/cm at a wavelength of around 1550 nm.
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机译：在本文中，我们提出了一种新颖的氮化硅（Si3N4）波导制造技术，该技术的厚度高达900 nm，适用于非线性光学应用。该制造方法基于在热氧化的硅中蚀刻沟槽并用Si 3 N 4填充沟槽。使用这种技术，在Si3N4层中未观察到应力引起的裂纹，从而导致了晶片上器件的高成品率。在大约1550 nm的波长处测得所得波导的传播损耗低至0.4 dB / cm。
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